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SD1727 (THX15)
RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS
FEATURES SUMMARY OPTIMIZED FOR SSB

Figure 1. Package
30 MHz 50 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN
.500 4L FL (M164) epoxy sealed
DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
Figure 2. Pin Connection
1. Collector 2. Emitter
3. Base 4. Emitter
Table 1. Order Codes
Order Codes SD1727 (THX15) Marking SD1727 Package M164 Packaging BLACK CARDBOARDS
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SD1727 (THX15)
Table 2. Absolute Maximum Ratings (Tcase = 25C)
Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 - 65 to +150 Unit V V V A W C C
Table 3. Thermal Data
Symbol RTH(j-c) Parameter Junction-Case Thermal Resistance Value 0.75 Unit C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25C) Table 4. Static
Value Symbol BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Test Conditions Min. IC = 100 mA; IE = 0 mA IC = 100 mA; VBE = 0 V IC = 100 mA; IB = 0 mA IE = 10 mA; IC = 0 mA VCE = 30 V; IE = 0 mA VCE = 60 V; IE = 0 mA VCE = 6 V; IC = 1.4 A 110 110 55 4.0 -- -- 18 Typ. -- -- -- -- -- -- -- Max. -- -- -- -- 5 5 43.5 V V V V mA mA -- Unit
Table 5. Dynamic
Symbol POUT GP (1) IMD (1) c(1) COB Test Conditions f = 30 MHz; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA f = 1 MHz; VCB = 50 V Value Min. 150 14 -- 37 -- Typ. -- -- -- -- -- Max. -- -- -30 -- 220 Unit W dB dBc % pF
Note: The SD1727 is also usable in Class A at 40 V. Typical performance is: POUT = 30 W PEP, GP = 14 dB, IMD = - 40dBc Note: 1. f1 = 30.00 MHz; f2 = 30.001 MHz
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TYPICAL PERFORMANCE Figure 3. Intermodulation Distortion vs Power Output PEP Figure 4. Power Output PEP vs Power Input
Figure 5. Collector Efficiency vs Power Output PEP
Figure 6. Power Gain vs Frequency
Figure 7. Power Gain vs Power Output PEP
Figure 8. Safe Operating Area
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IMPEDANCE DATA Figure 9. Typical Input Impedance
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BIAS CIRCUIT Figure 10. Bias Circuit
TEST CIRCUIT - CLASS AB - 30 MHZ Figure 11. Test Circuit - Class AB - 30 Mhz
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Table 6. Test Circuit - Class AB - 30 Mhz
C1 C2 C3 C4 C5, C6 C7 C8. C12 C9, C11, C15 C10 C13 C14 L1 L2 L3 L4 L5 L6, L7, L8 R Arco 427 Arco 4611 Arco 4615 220pF Arco 4215 Arco 426 100nF 63V 1nF 470F 40V 220F 63V 10nF 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm 4 Turns Diameter 12mm, 2mm Wire, Length 25mm Choke 0.6
MOUNTING CIRCUIT - CLASS AB - 30 MHZ Figure 12. Mounting Circuit - Class AB - 30 Mhz
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PACKAGE MECHANICAL Table 7. M164 Mechanical Data
Symbol A B C D E F G H 4.70 12.62 13.84 12.57 0.08 millimeters Min 5.59 Typ Max 5.84 26.67 14.10 12.83 0.18 21.08 5.03 13.46 0.185 0.497 0.545 0.495 0.003 Min 0.220 inches Typ Max 0.230 1.050 0.555 0.505 0.007 0.830 0.198 0.530
Figure 13. M164 Package Dimensions
Note: Drawing is not to scale.
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REVISION HISTORY Table 8. Revision History
Date November-1992 8-June-2004 Revision 1 2 First Issue Stylesheet update. No content change. Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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